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HYS72T1G042ER - 240-Pin Dual Die Registered DDR2 SDRAM Modules

HYS72T1G042ER_5351911.PDF Datasheet


 Full text search : 240-Pin Dual Die Registered DDR2 SDRAM Modules


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SAMSUNG[Samsung semiconductor]
0702871038 2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with Retention Pin, 80 Circuits, 6.10mm (.240) Mating Pin Length, Tin (Sn) Plating
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70287-1005 0702871005 2.54mm (.100") Pitch C-Grid庐 Header, Breakaway, Dual Row, Vertical, with Retention Pin, 14 Circuits, 6.10mm (.240") Mating Pin Length, Tin (Sn) Plating
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70287-1020 0702871020 2.54mm (.100) Pitch C-Grid庐 Header, Breakaway, Dual Row, Vertical, with Retention Pin, 44 Circuits, 6.10mm (.240) Mating Pin Length, Tin (Sn) Plating
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0702871220 70287-1220 2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with RetentionPin, 52 Circuits, 6.10mm (.240) Mating Pin Length, 0.76μm (30μ) Gold (Au) Selective
2.54mm (.100") Pitch C-Grid垄莽 Header, Breakaway, Dual Row, Vertical, with RetentionPin, 52 Circuits, 6.10mm (.240") Mating Pin Length, 0.76楼矛m (30楼矛") Gold (Au)
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